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GLS29EE512

The GLS29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The GLS29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The GLS29EE512 conforms to JEDEC standard pin assignments for byte-wide memories.



Sample Request Form
 
Type Voltage Density Read Access Speed Temperature Range Package Type
x8 Page-Write EEPROM 4.5-5.5 512 Kbit 70 ns 0°C to +70°C
-40°C to +85°C
PLCC (13 x 15 mm)
TSOP (8 x 14 mm)
Product Documents:
Data Sheet: 512 Kbit (64K x8) Page-Write EEPROM
Product Brief: Specialty Flash Memory
产品简介: 闪存
Product Support:
Application Note : Protecting Against Unintentional Writes When Using Single Power Supply Flash Memory
Simulation Tools:
IBIS Model
SOMA
Developer Support:
Greenliant Programming Solutions
Green and Reliant™Green and Reliant™  
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